2SB1424-R

Marking：AER；Package：SOT-89；PNP Transistors

■Features ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2150

2SB1424-R

PNP Transistors

2SB1424

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SB1424

Plastic-EncapsulateTransistors

FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150.

2SB1424

SiliconPNPtransistorinaSOT-89PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics. Applications Generalpurposeamplifier.

2SB1424

LowVCE(sat)Transistor(??0V,??A)

Features 1)LowVCE(sat). VCE(sat)=−0.2V(Typ.) (IC/IB=−2A/−0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor

2SB1424

LowVCE(SAT)0.2V(Typ.)(IC/IB=-2A/-0.1mA).

FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150.

2SB1424

LowVCE(sat)Transistor

FEATURES ●LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ●ExcellentDCcurrentgaincharacterisitics. ●Complementarythe2SD2150. APPLICATIONS ●Thisdeviceisdesignedasageneralpurposeamplifier andswitching.

2SB1424

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150

2SB1424

SOT-89-3LPlastic-EncapsulatePNPTransistors

FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150