isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for high power amplificati

文件：267.7 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2140 APPLICATIONS • Designed for high power amplifications. • Optimum for the output stage of a HiFi audio amplifier

文件：130.91 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

ROHM/罗姆
SOT-89

ROHM/罗姆

上传：佛山市芯光达科技有限公司

ROHM
SC-59

ROHM

罗姆

上传：深圳市航润创能电子集团有限公司

RENESAS
SOT23

RENESAS

瑞萨

上传：深圳市正纳电子有限公司