isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications.

文件：244.43 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage-.. :V(BR)cEo=-120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -1.5A APPLICATIONS • Designed for low frequency power amplifier applications.

文件：127.61 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications

文件：128.88 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：130.5 Kbytes 页数：3 Pages

SAVANTIC