30V/8A High-Speed Switching Applications

Features • Micaless package facilitating mounting. • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Relay drivers, high-speed inverters, converters, etc.

文件：113.65 Kbytes 页数：3 Pages

SANYO

三洋

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A) • Complement to Type 2SD2219 • Complement to Type 2SD2065 • Minimum Lot-to-Lot variations for robust device performance and reliable opera

文件：261.42 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -5A, IB= -0.25A) • Complement to Type 2SD2219 APPLICATIONS • Designed for high-speed inverters,converters.

文件：128.25 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications

ONSEMI

安森美半导体