2SB1490

Silicon PNP epitaxial planar type Darlington(For power amplification)

SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2250 ■Features •Optimumfor80WHiFioutput •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat)

2SB1490

Silicon PNP Power Transistors

DESCRIPTION •WithTO-3PLpackage •Complementtotype2SD2250 •HighDCcurrentgain •Lowcollectorsaturationvoltage •DARLINGTON APPLICATIONS •Forpoweramplification •OptimumforHiFioutputapplications

2SB1490

isc Silicon PNP Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain-:hFE=5000(Min)@lc=-6A •Low-CollectorSaturationVoltage-:VCE(sat)=-2.5V(Max.)@lc=-6A •ComplementtoType2SD2250 APPLICATIONS •Designedforpoweramplifierapplications •OptimumforSOWHiFioutputapplications.

2SB1490

Silicon PNP Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain-:hFE=5000(Min)@lc=-6A •Low-CollectorSaturationVoltage-:VCE(sat)=-2.5V(Max.)@lc=-6A •ComplementtoType2SD2250 APPLICATIONS •Designedforpoweramplifierapplications •OptimumforSOWHiFioutputapplications.

2SB1490

Silicon PNP Power Transistors