Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2250 ■ Features • Optimum for 80 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

文件：71.09 Kbytes 页数：3 Pages

PANASONIC

松下

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -6A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@lc= -6A • Complement to Type 2SD2250 APPLICATIONS • Designed for power amplifier applications • Optimum for SOW HiFi output applications.

文件：249.27 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -6A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@lc= -6A • Complement to Type 2SD2250 APPLICATIONS • Designed for power amplifier applications • Optimum for SOW HiFi output applications.

文件：79.84 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2250 • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For power amplification • Optimum for HiFi output applications

文件：114.76 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：116.37 Kbytes 页数：3 Pages

SAVANTIC