isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) • Low-Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@IC= -1.5A • Complement to Type 2SD2257 APPLICATIONS • Designed for high power switching applications.

文件：241.21 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, lc=-2A) • Low-Collector Saturation Voltage- : VCE(satr -1.5V(Max.)@lc= -1.5A • Complement to Type2SD2257 APPLICATIONS • Designed for high power switchingapplications.

文件：72.95 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2257 • High DC current gain. • Low saturation voltage. • DARLINGTON APPLICATIONS • High power switching applications

文件：213.19 Kbytes 页数：3 Pages

SAVANTIC

TRANSISTOR (HIGH POWER SWITCHING APPLICATIONS)

High-Power Switching Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257

文件：158.11 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon PNP Epitaxial Type

文件：137.62 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

文件：214.8 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Epitaxial Type

文件：137.62 Kbytes 页数：4 Pages

TOSHIBA

东芝

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 3A TO220NIS

Toshiba Semiconductor and Storage

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 3A TO220NIS

Toshiba Semiconductor and Storage