2SB1495,Q(M

包装：散装 封装/外壳：TO-220-3 整包 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 3A TO220NIS

Toshiba Semiconductor and Storage

2SB1495

TRANSISTOR(HIGHPOWERSWITCHINGAPPLICATIONS)

High-PowerSwitchingApplications •HighDCcurrentgain:hFE=2000(min)(VCE=−2V,IC=−2A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−1.5A) •Complementaryto2SD2257

2SB1495

SiliconPNPEpitaxialType

2SB1495

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2257 •HighDCcurrentgain. •Lowsaturationvoltage. •DARLINGTON APPLICATIONS •Highpowerswitchingapplications

2SB1495

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,IC=-2A) •Low-CollectorSaturationVoltage- :VCE(sat)=-1.5V(Max.)@IC=-1.5A •ComplementtoType2SD2257 APPLICATIONS •Designedforhighpowerswitchingapplications.

2SB1495

SiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,lc=-2A) •Low-CollectorSaturationVoltage- :VCE(satr-1.5V(Max.)@lc=-1.5A •ComplementtoType2SD2257 APPLICATIONS •Designedforhighpowerswitchingapplications.

2SB1495

SiliconPNPPowerTransistors