Silicon PNP epitaxial planar type Darlington

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：70.34 Kbytes 页数：3 Pages

Panasonic

松下

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -4A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A • Complement to Type 2SD2275 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

文件：268.65 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -4A • Complement to Type 2SD2275 APPLICATIONS • Designed for power amplifier applications • Optimum for 55W HiFi output applications.

文件：79.17 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage- : VcE • Complement to Type 2SD2276 • Complement to Type 2SD2276 APPLICATIONS • Designed for power amplifier applications • Optimum for 11OW HiFi output applications.

文件：78.81 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：70.96 Kbytes 页数：3 Pages

Panasonic

松下

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS ·Designed for power amplifier applications ·Optimum for 110W HiFi output applications.

文件：249.41 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for 110W Hi-Fi output applications

文件：114.04 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP epitaxial planar type darlington

Silicon PNP epitaxial planar type darlington For power switching • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping

文件：90.4 Kbytes 页数：3 Pages

Panasonic

松下

High-Current Switching Applications

50V/7A High-Current Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max. • Wide ASO and highly registant to breakdown. • Micaless package facilitating easy mounting. Applications • Relay drivers, high-speed inverters, converters.

文件：102.2 Kbytes 页数：3 Pages

SANYO

三洋

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2280 APPLICATIONS • Designed for relay drivers,high-speed inverters,converters.

文件：259.43 Kbytes 页数：2 Pages

ISC

无锡固电