PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1431 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm

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NEC

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isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) • Low Collector Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation A

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ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -3mA) APPLICATIONS • Designed for low-frequency power amplifiers and lo

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON POWER TRANSISTOR

文件：257.73 Kbytes 页数：8 Pages

RENESAS

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Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SB1431 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insul • High hFE due to Darlington connection: hFE ≥ 2,000 (VCE = −2 V, IC = −3 A)\n• Mold package that does not require an insulating board or insulation bushing;

Renesas

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PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

文件：257.73 Kbytes 页数：8 Pages

RENESAS

瑞萨