FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

[Isahaya] DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package.

文件：120.81 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

DESCRIPTION Mitsubishi 2SB1314 is a silicon PNP epitaxial planar type power transistor using insulated full mold package. APPLICATION Power supply circuit, solenoid drive.

文件：123.49 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

文件：130.039 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

文件：148.52 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Good Linearity of hFE • Complement to Type 2SD1977 APPLICATIONS • Audio frequency power amplifier applications • Recommend for 45-55W audio frequency amplifier output stage applications

文件：125.92 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION • Darlington connection for high DC current gain • Built in resistor between base and emitter • Built in damper diode • Complementary NPN types:2SD2195/2SD1980 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

文件：271.85 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：TL；Package：CPT3；Power Transistor (−100V , −2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

文件：78.28 Kbytes 页数：3 Pages

ROHM

罗姆

Power Transistor (??00V,??A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

文件：130.93 Kbytes 页数：3 Pages

ROHM

罗姆

Power Transistor

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.

文件：78.72 Kbytes 页数：3 Pages

ROHM

罗姆

Silicon PNP triple diffusion planar type(For high power amplification)

Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 ■ Features • Excellent collector current IC characteristics of forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Optimum for the output stage of a Hi-F

文件：54.07 Kbytes 页数：3 Pages

PANASONIC

松下