TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-Voltage Switching Applications • High breakdown voltage: VCEO= −400 V • Low saturation voltage: VCE (sat)= −1 V (max) (IC= −100 mA, IB= −10 mA) • Collector metal (fin) is fully covered with mold resin.

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isc Silicon PNP Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO = - 400 V(Min) ·Complement to the PNP 2SC3425 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.

文件：324.11 Kbytes 页数：2 Pages

ISC

无锡固电

High-Voltage Switching Applications

文件：159.98 Kbytes 页数：4 Pages

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High-Voltage Switching Applications

文件：159.98 Kbytes 页数：4 Pages

TOSHIBA

东芝