Transistor Silicon PNP Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = － 160 V • Small collector output capacitance : Cob = 17 pF (typ.) • High transition frequency : fT = 100 MHz (typ.) • Complementary to 2SC6140

文件：173.27 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

230V / 15A, AF100W Output Applications

230V / 15A, AF100W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. Applications • 230V / 15A, AF100W output applications.

文件：317.22 Kbytes 页数：4 Pages

SANYO

三洋

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching.

文件：63.18 Kbytes 页数：4 Pages

SANYO

三洋

Silicon PNP Power Transistor

FEATURES ·Low Collector-to-emitter Saturation Voltage ·Large Current Capacitance ·High-speed Switching DESCRIPTION ·Relay drivers ·Lamp drivers ·Motor drivers

文件：483.01 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • relay drivers,lamp drivers,motor drivers

文件：265.94 Kbytes 页数：2 Pages

ISC

无锡固电

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of MBIT process • Large current capacitance (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

文件：303.89 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -50V, -10A, Low VCE(sat) PNP TO-220F-3FS

Features • Adoption of MBIT process • Large current capacity (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

文件：245.83 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

isc Silicon PNP Power Transistor

文件：269.36 Kbytes 页数：2 Pages

ISC

无锡固电

Audio Amplification Transistor

文件：226.4 Kbytes 页数：6 Pages

SANKEN

三垦