Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.

文件：45.19 Kbytes 页数：4 Pages

SANYO

三洋

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：55.94 Kbytes 页数：2 Pages

ISAHAYA

谏早电子

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

文件：49.53 Kbytes 页数：5 Pages

SANYO

三洋

DC / DC Converter Applications

文件：107.11 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

文件：49.45 Kbytes 页数：5 Pages

SANYO

三洋

丝印：P；Package：VMN3；General Purpose Transistor

文件：86.64 Kbytes 页数：4 Pages

ROHM

罗姆

Transistor for low frequency small-signal amplification

Feature：High current\nPolarity：PNP\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC -1.7 A \nCollector-emitter voltage VCEO -50 V ;

Toshiba

东芝

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

IDC

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

ONSEMI

安森美半导体