丝印：2SA2182；Package：SC-67；Power Amplifier Applications Driver Stage Amplifier Applications

Features ・High transition frequency: fT = 80 MHz (typ.)

文件：171.92 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：2SA2183；Package：SC-67；High Current Switching Applications

Features - Low collector-emitter saturation : VCE(sat) = −1.0 V（max）

文件：179.95 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：2SA2184；Package：TO-252；Silicon Power Transistor

Features - Low collector saturation voltage. VCE(sat)=-0.7V(Max.) @ IC=-0.3A - High switching speed. - Designed for high current switching applications.

文件：776.41 Kbytes 页数：4 Pages

COMCHIP

典琦

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes

文件：576.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

High Current Switching Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes

文件：28.68 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes

文件：576.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：BW；Package：SOT-346；Low frequency transistor

Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

文件：80.68 Kbytes 页数：3 Pages

ROHM

罗姆

Low Ferquency PNP Transistor

VOLTAGE 12 Volts CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SOT-23) * A collector current is large. * Collector saturation voltage is low. VCE(sat)

文件：102.33 Kbytes 页数：3 Pages

CHENMKO

力勤

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝