High-Speed Switching Applications

High-Speed Switching Applications Features • Adoption of FBET processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • Fast switching speed.

文件：94.56 Kbytes 页数：3 Pages

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：321.99 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= -0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：302.96 Kbytes 页数：3 Pages

ISC

无锡固电

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4539

文件：195.12 Kbytes 页数：4 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon PNP Epitaxial

Features ● Low saturation voltage: VCE(sat) = -0.5 V (max) (IC = -700 mA). ● High speed switching time: tstg = 0.2ìs (typ.). ● Small flat package. ● PC = 1.0 to 2.0 W (mounted on ceramic substrate).

文件：56.81 Kbytes 页数：2 Pages

KEXIN

科信电子

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4540

文件：148.59 Kbytes 页数：3 Pages

TOSHIBA

东芝

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -500mA) ● High Speed Switching Time: tstg = 0.25ìs(typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC4540

文件：225.62 Kbytes 页数：2 Pages

KEXIN

科信电子

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat)= -0.5V (max) (IC= -1.5A) ● High Speed Switching Time: tstg= 0.2ìs(typ.) ● Small Flat Package ● PC= 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC4541

文件：431.6 Kbytes 页数：3 Pages

KEXIN

科信电子

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 μs (typ.) • Small flat package • PC= 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4541

文件：195.86 Kbytes 页数：4 Pages

TOSHIBA

东芝