isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) APPLICATIONS • This type of power transistor is developed for high-speed

文件：149.4 Kbytes 页数：2 Pages

ISC

无锡固电

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

文件：130.57 Kbytes 页数：6 Pages

NEC

瑞萨

丝印：HFE2；SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulatio

文件：282 Kbytes 页数：8 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

文件：144.3 Kbytes 页数：6 Pages

NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V, IC= -3A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A

文件：322.52 Kbytes 页数：3 Pages

ISC

无锡固电

Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS • This type of power transistor is developed for high-speed

文件：112.48 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS • This type of power transistor is developed for high-speed

文件：140.93 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP Epitaxial Planar Silicon Transistors

Features ● Very small-sized package. ● Low collector-to-emitter saturation voltage.

文件：46.85 Kbytes 页数：1 Pages

KEXIN

科信电子

Low-Frequency General-Purpose Amp Applications

Low-Frequency General-Purpose Amplifier Applications Features • Very small-sized package permitting the 2SA1745 2SC4555-applied set to be made small and slim. • Low collector-to-emitter saturation voltage.

文件：106.8 Kbytes 页数：4 Pages

SANYO

三洋

Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, Switch and General Purpose)

Application : Chopper Regulator, Switch and General Purpose

文件：24.64 Kbytes 页数：1 Pages

SANKEN

三垦