PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

文件：126.73 Kbytes 页数：6 Pages

NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) APPLICATIONS • This type of power transistor is developed for high-speed

文件：149.4 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON POWER TRANSISTOR

文件：250.49 Kbytes 页数：8 Pages

RENESAS

瑞萨

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1742 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded • High hFE and low VCE(sat): hFE ≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A VCE(sat) ≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A\n• Full-mold package that does not require an insulating board or bushing;

Renesas

瑞萨

BJT 双极性三极管

SPTECH

质超微

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件：250.49 Kbytes 页数：8 Pages

RENESAS

瑞萨