TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4539

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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东芝

Silicon PNP Epitaxial

Features ● Low saturation voltage: VCE(sat) = -0.5 V (max) (IC = -700 mA). ● High speed switching time: tstg = 0.2ìs (typ.). ● Small flat package. ● PC = 1.0 to 2.0 W (mounted on ceramic substrate).

文件：56.81 Kbytes 页数：2 Pages

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Power Amplifier Applications Power Switching Applications

文件：167.16 Kbytes 页数：5 Pages

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东芝

Power transistor for high-speed switching applications

Application Scope：Switching / Power amplifier\nPolarity：PNP\nRoHS Compatible Product(s) (#)：Available Collector Current IC -1.2 A \nCollector power dissipation (mounted on ceramic board (250mm**2, t0.8mm)) PC 1 W \nCollector-emitter voltage VCEO -30 V ;

Toshiba

东芝

Power Amplifier Applications Power Switching Applications

文件：167.16 Kbytes 页数：5 Pages

TOSHIBA

东芝

PNP Transistors

文件：968.95 Kbytes 页数：3 Pages

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