Silicon PNP Epitaxial

Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier Application High frequency amplifier

文件：32.84 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

TRANSISTOR (LOW FREQUENCY, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS

LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hFE Linearity : hFE(2)=35(Min.), (VCE= -2V, IC= -300mA) • Complementary to 2SC4707

文件：148.75 Kbytes 页数：2 Pages

TOSHIBA

东芝

丝印：AJ*；Package：SOT-89；High-voltage Switching Transistor (-400V, -0.5A)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

文件：250.04 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：AJ*；Package：MPT3；High-voltage Switching Transistor (Telephone power supply)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

文件：31.81 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：AJ*；Package：SOT-89；PNP Transistors

■ Features ● High breakdown voltage, BVCEO=-400V. ● High switching speed, typically tf :1us at IC =-100mA. ●High-voltage Switching Transistor

文件：1.16429 Mbytes 页数：3 Pages

KEXIN

科信电子

PNP Epitaxial Planar Silicon Transistors

Features ● Very small-sized package. ● Adoption of FBET process. ● High DC current gain (hFE=500 to 1200). ● Low collector-to-emitter saturation voltage (VCE(sat) ≤ 0.3V). ● High VEBO (VEBO ≥ 15V).

文件：46.01 Kbytes 页数：1 Pages

KEXIN

科信电子

Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications?

Features • Very small-sized package permitting 2SA1813-applied sets to be made smaller and slimmer. • Adoption of FBET process. • High DC current gain (hFE=500 to 1200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V).

文件：81.58 Kbytes 页数：3 Pages

SANYO

三洋

Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications???

Features · Very small-sized package permitting 2SA1814-applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCEO(sat)≤0.3V). · High VEBO(VEBO≥15V).

文件：83.23 Kbytes 页数：3 Pages

SANYO

三洋

FM,RM,MIX,IF Amp, High-Frequency General-Purpose Amp Applications???

PNP Epitaxial Planar Silicon Transistors Features • High power gain : PG=25dB (f=100MHz). • High cutoff frequency ; fT=750MHz typ. • Low collector-to-emitter saturation voltage. • Complementary pair with the 2SC4432.

文件：71.9 Kbytes 页数：3 Pages

SANYO

三洋

Silicon PNP epitaxial planer type

Features ● High collector to emitter voltage VCEO.

文件：21.88 Kbytes 页数：1 Pages

PANASONIC

松下