Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications?

Features • Very small-sized package permitting 2SA1813-applied sets to be made smaller and slimmer. • Adoption of FBET process. • High DC current gain (hFE=500 to 1200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V).

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SANYO

三洋

PNP Epitaxial Planar Silicon Transistors

Features ● Very small-sized package. ● Adoption of FBET process. ● High DC current gain (hFE=500 to 1200). ● Low collector-to-emitter saturation voltage (VCE(sat) ≤ 0.3V). ● High VEBO (VEBO ≥ 15V).

文件：46.01 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications

ONSEMI

安森美半导体

PNP Transistors

文件：1.06583 Mbytes 页数：3 Pages

KEXIN

科信电子