High Voltage Driver Applications?????????????

High-Voltage Driver Applications Features • Large current capacity (IC=2A). • High breakdown voltage (VCEO≥400V). • Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion.

文件：127.91 Kbytes 页数：4 Pages

SANYO

三洋

High-Voltage Amp, High-Voltage Switching

High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEOmin=–800V). · Small Cob(Cobtyp=1.6pF). · High reliabirity (Adoption of HVP processes).

文件：87.18 Kbytes 页数：3 Pages

SANYO

三洋

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

文件：150.55 Kbytes 页数：2 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

文件：208.58 Kbytes 页数：3 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

文件：208.58 Kbytes 页数：3 Pages

TOSHIBA

东芝

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

文件：208.58 Kbytes 页数：3 Pages

TOSHIBA

东芝

PNP TRANSISTOR

FEATURES: High voltage and high current Excellent hFE linearity High h FE Complementary to 2SA1832

文件：774.8 Kbytes 页数：3 Pages

WEITRON

丝印：SG；Package：SOT-523；Plastic-Encapsulate Transistors

FEATURES ● High voltage and high current. ● Excellent hFE linearity. ● High hFE. ● Complementary to 2sc4738. ● Small package.

文件：179.07 Kbytes 页数：4 Pages

BILIN

银河微电

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High voltage and high current ● Excellent hFE linearity ● Complementary to 2SC4738

文件：1.54994 Mbytes 页数：4 Pages

JIANGSU

长电科技

Silicon PNP Epitaxial Type Transistor

■ Features ● High voltage and high current ● Excellent hFE linearity ● Complementary to 2SC4738

文件：37.23 Kbytes 页数：1 Pages

KEXIN

科信电子