Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO • Mini power type package, allowing downsizing of the equipment and automatic ins

文件：37.73 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP Epitaxial Planar

Features ● Low collector-emitter saturation voltage VCE(sat) ● High collector-emitter voltage (Base open) VCEO

文件：35.24 Kbytes 页数：1 Pages

KEXIN

科信电子

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C) • High-speed switching time

文件：100.51 Kbytes 页数：2 Pages

TOSHIBA

东芝

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W • High-speed switching tim

文件：210.44 Kbytes 页数：3 Pages

TOSHIBA

东芝

TRANSISTOR (STOROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Audio Power Amplifier Applications • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 V, IB = −0.1 A) • High-power dissipation: PC = 1.3 W

文件：186.77 Kbytes 页数：3 Pages

TOSHIBA

东芝

DC/DC Converter, Motor Driver Applications

DC/DC Converter, Motor Driver Applications Features • Adoption of FBET processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • Small size making it easy to provide high-density, small-sized hybrid ICs.

文件：83.03 Kbytes 页数：3 Pages

SANYO

三洋

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES • High current capacitance • Low collector saturation voltage and high hFE • Insulatio

文件：107.22 Kbytes 页数：6 Pages

NEC

瑞萨

SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed.

文件：229.98 Kbytes 页数：8 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES • High current capacitance • Low collector saturation voltage and high hFE • Insulatio

文件：107.22 Kbytes 页数：6 Pages

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES • High current capacitance • Low collector saturation voltage and high hFE • Insulatio

文件：107.22 Kbytes 页数：6 Pages

NEC

瑞萨