PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES • High current capacitance • Low collector saturation voltage and high hFE • Insulatio

文件：107.22 Kbytes 页数：6 Pages

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES • High current capacitance • Low collector saturation voltage and high hFE • Insulatio

文件：107.22 Kbytes 页数：6 Pages

NEC

瑞萨

SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed.

文件：229.98 Kbytes 页数：8 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SA1897 features a low saturation voltage and is available for high current control in small dimension. This transistor is ideal for high efficiency DC/DC converters due to fast switching speed. FEATURES • High current capacitance • Low collector saturation voltage and high hFE • Insulatio

文件：107.22 Kbytes 页数：6 Pages

NEC

瑞萨