首页 >2N7002DW-F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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MOSFET Features -Voltagecontrolledsmallsignalswitch. -Lowinputcapacitance. -Fastswitchingspeed. -Lowinput/outputleakage. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DualN-ChannelMOSFET Features •HighDensityCellDesignForLowRDS(ON) •VoltageControlledSmallSignalSwitch •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS C | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applicatio | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-ChannelMOSFET Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+ | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:3 •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:7.5ns •LowInputandOutputLeakage •ComplianttoRoHSDirective2002/95/EC BENEFITS •LowOffsetVoltage •Low-Vo | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapaci | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-channelTrenchMOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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