DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

文件：265.06 Kbytes 页数：5 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

文件：265.06 Kbytes 页数：5 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

文件：265.06 Kbytes 页数：5 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

文件：265.06 Kbytes 页数：5 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

文件：265.06 Kbytes 页数：5 Pages

DIODES

美台半导体

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

文件：306.81 Kbytes 页数：6 Pages

UTC

友顺

OptiMOS??Small-Signal-Transistor

Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：203.51 Kbytes 页数：9 Pages

Infineon

英飞凌

MOSFET

Features - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage.

文件：498.59 Kbytes 页数：6 Pages

COMCHIP

典琦

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati

文件：734.81 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：DWK；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati

文件：734.81 Kbytes 页数：7 Pages

DIODES

美台半导体