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2N7002DWA

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

美台半导体

2N7002DWA-13

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

美台半导体

2N7002DWA-7

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

美台半导体

2N7002DWAQ-13

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

美台半导体

2N7002DWAQ-7

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

美台半导体

2N7002DWG-AL6-R

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

UTCUnisonic Technologies

友顺友顺科技股份有限公司

2N7002DWH6327

OptiMOS??Small-Signal-Transistor

Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

2N7002DW-HF

MOSFET

Features -Voltagecontrolledsmallsignalswitch. -Lowinputcapacitance. -Fastswitchingspeed. -Lowinput/outputleakage.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

2N7002DWK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODESDiodes Incorporated

美台半导体

2N7002DWK-13

Marking:DWK;Package:SOT363;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODESDiodes Incorporated

美台半导体

详细参数

  • 型号:

    2N7002D

  • 功能描述:

    MOSFET N-Chan Enhancement Mode Field Effect

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
23+
SC70-6
8890
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
N/A
2402+
SC70-6
8324
原装正品!实单价优!
询价
DIODESINC
24+/25+
5561
原装正品现货库存价优
询价
ON
23+
原厂封装
9896
询价
DIODES
17+
NA
6200
100%原装正品现货
询价
DIODES
13+
6181
原装分销
询价
DIODES
24+
TSSOP
500
原装现货假一罚十
询价
恩XP
16+
NA
8800
诚信经营
询价
DIODES
01+
SOT23
1200
全新原装进口自己库存优势
询价
DIODES
23+
SOT-363
60000
原装正品,假一罚十
询价
更多2N7002D供应商 更新时间2025-5-28 16:09:00