Small Signal MOSFET 200 mAmps, 60 Volts N?묬hannel TO??2 200 mAMPS 60 VOLTS

文件：57.66 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

N沟道增强模式场效应晶体管60V，200mA，5Ω

• Voltage Controlled Small Signal Switch\n• High Saturation Current Capability\n• Rugged and Reliable\n• High Density Cell Design for Low RDS(ON);

ONSEMI

安森美半导体

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes

美台半导体

N-Channel MOSFET

JSCJ

长晶科技

N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES • High density cell design for low RDS(ON). • Voltage controolled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：67.07 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Fast Switching Times ● Improved Inductive Ruggedness ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：85.23 Kbytes 页数：3 Pages

FAIRCHILD

仙童半导体