NPN SILICON POWER DARLINGTON TRANSISTORS

15 AMPERE POWER TRANSISTORS NPN SILICON DARLINGTON 60, 90, 120 VOLTS 120 WATTS General–purposeEpiBase power Darlington transistors, suitable for linear and switching applications. • Replacement for 2N3055 and Driver • High Gain Darlington Performance • Built–in Diode Protection for Reverse Pol

文件：664.42 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max) @IC=15A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：287.44 Kbytes 页数：2 Pages

ISC

无锡固电

SI NPN POWER BJT

Description: Si NPN Power BJT, I(C) = 10 A to 19.9 A

文件：100.43 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • High Voltage,High Speed • Low Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Off-line power supplies • Switch

文件：254.25 Kbytes 页数：2 Pages

ISC

无锡固电

Small Signal Transistors

Small Signal Transistors TO-39 Case

文件：54.25 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

GERMANIUM PNPSMALL SIGNAL TRANSISTORS

GERMANIUM PNP SMALL SIGNAL TRANSISTORS

文件：83.55 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

GERMABIUM PNP MESA TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS

文件：1.1394 Mbytes 页数：2 Pages

AMMSEMI

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • High Voltage,High Speed • Low Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) APPLICATIONS • Off-line power supplies • Switching amplifiers • Inverters/Converters • Motor speed control circuits • Switching r

文件：143.47 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) • High Current Capability • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：274.29 Kbytes 页数：2 Pages

ISC

无锡固电

SI NPN POWER BJT

Description: Si NPN Power BJT, I(C) = 10 A to 19.9 A

文件：118.71 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司