PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

文件：57.51 Kbytes 页数：2 Pages

MICREL

麦瑞半导体

PNP DARLINGTON POWER SILICON TRANSISTOR

PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501

文件：57.55 Kbytes 页数：2 Pages

MICROSEMI

美高森美

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058

文件：190.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

文件：195.37 Kbytes 页数：4 Pages

BOCA

博卡

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

文件：495.5 Kbytes 页数：2 Pages

CENTRAL

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

文件：188.54 Kbytes 页数：4 Pages

MOSPEC

统懋

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

文件：223.22 Kbytes 页数：5 Pages

COMSET

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Transistor, Bipolar, TO-3, PNP, 12 A, 100 V, 150 W

Description : A silicon PNP Darlington transistors in a TO-3 type case designed for general-purpose amplifier and low-frequency applications Features - High DC Current Gain - Collector-Emitter Sustaining Voltage : Vced(sus) = 100V Min @ 100mA -Monolithic Construction with Buit-in Base-Emitte

文件：174.77 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

文件：90.89 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司