SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

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CENTRAL

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

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MOSPEC

统懋

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

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COMSET

Power Transistors

Power Transistors

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ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION • Built-in Base-Emitter Shunt Resistors • High DC current gainhFE = 750 (Min) @ IC = -6A • Collector-Emitter Sustaining VoltageVCEO(SUS)= -80V(Min) • Complement to type 2N6058 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications.

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ISC

无锡固电

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COLLECTOR-EMITTER VOLTAGE

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

文件：90.89 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Bipolar PNP Device in a Hermetically sealed TO3

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 80V IC = 12A

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SEME-LAB

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

文件：90.89 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司