COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M

文件：174.34 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044

文件：205.87 Kbytes 页数：4 Pages

BOCA

博卡

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

文件：71.78 Kbytes 页数：1 Pages

CENTRAL

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

文件：265.81 Kbytes 页数：2 Pages

CENTRAL

PNP DARLINGTON TRANSISTOR

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：137.61 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER DERATING

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：241.09 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=-100V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -2.0V(Max) @IC=-3A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：279.5 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):2.0V(Max) @IC=4.0A APPLICATIONS · Designed for medium power switching amplifier applications.

文件：353.19 Kbytes 页数：2 Pages

ISC

无锡固电

POWER DERATING

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：241.09 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications

文件：106.54 Kbytes 页数：3 Pages

SAVANTIC