Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 APPLICATIONS ·They are intended for use in power linear and switching applications

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JMNIC

锦美电子

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ HIGH CURRENT CAPABILITY APPLICATION

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STMICROELECTRONICS

意法半导体

Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

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ONSEMI

安森美半导体

Silicon PNP Power Transistors

文件：114.83 Kbytes 页数：3 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.52 Kbytes 页数：1 Pages

SEME-LAB

Silicon NPN Power Transistors

文件：118.24 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件：114.32 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：118.24 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件：114.32 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：115.12 Kbytes 页数：3 Pages

SAVANTIC