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2N5881

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

文件:186.39 Kbytes 页数:4 Pages

boca

博卡

2N5881

POWER TRANSISTORS(15A,160W)

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

文件:180.43 Kbytes 页数:4 Pages

MOSPEC

统懋

2N5881

Power Transistors

Power Transistors

文件:347.98 Kbytes 页数:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2N5881

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications

文件:131.29 Kbytes 页数:3 Pages

ISC

无锡固电

2N5881

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications

文件:118.24 Kbytes 页数:3 Pages

JMNIC

锦美电子

2N5881

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20

文件:171.42 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N5881

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications

文件:112.74 Kbytes 页数:3 Pages

SAVANTIC

2N5881

Silicon NPN Power Transistors

文件:114.32 Kbytes 页数:3 Pages

SAVANTIC

2N5881

Bipolar NPN Device in a Hermetically sealed TO3

文件:15.52 Kbytes 页数:1 Pages

SEME-LAB

2N5881

Silicon NPN Power Transistors

文件:118.24 Kbytes 页数:3 Pages

JMNIC

锦美电子

产品属性

  • 产品编号:

    2N5881

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)

  • 晶体管类型:

    NPN

  • 描述:

    TRANS NPN 60V 15A

供应商型号品牌批号封装库存备注价格
MOT
24+
TO-3
10000
询价
TI
313
全新原装 货期两周
询价
MOTOROLA
CAN
1679
专营铁帽CANCDIP
询价
Microsemi
1942+
N/A
908
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MICROSEMI
25+
SMD
96
就找我吧!--邀您体验愉快问购元件!
询价
2N5881
25+
73
73
询价
Microsemi Corporation
2022+
-
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
MOTOROLA
23+
2
5000
专注配单,只做原装进口现货
询价
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
询价
MOTOROLA/摩托罗拉
2450+
TO-2
6540
原装现货或订发货1-2周
询价
更多2N5881供应商 更新时间2025-11-30 16:30:00