| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2N3906 | 丝印：2N3906；Package：T0-92；T0-92 Plastic-Encapsulate Transistors FEATURE § ® PNP silicon epitaxial planar transistor for switching and Amplifier applications ® As complementary type, the NPN transistor 2N3904 is Recommended ® This transistor is also available in the SOT-23 case with the type designation MMBT3906 文件：1.41716 Mbytes 页数：5 Pages | DGNJDZ 南晶电子 | DGNJDZ | |
丝印：2N3906；Package：TO-923L；PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 文件：421.71 Kbytes 页数：13 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
丝印：2N3906；Package：TO-92；General Purpose Transistor Features - PNP silicon epitaxial planar transistor for switching and amplifier applications. 文件：470.75 Kbytes 页数：4 Pages | COMCHIP 典琦 | COMCHIP | ||
丝印：2N3906；Package：TO-923L；PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 文件：421.71 Kbytes 页数：13 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
丝印：2N3906；Package：TO-923L；PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 文件：421.71 Kbytes 页数：13 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
丝印：2N3906；Package：TO-923L；PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 文件：421.71 Kbytes 页数：13 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
丝印：2N3906；Package：TO-923L；PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 文件：421.71 Kbytes 页数：13 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
2N3906 | 丝印：2N3906；Package：T0-92；T0-92 Plastic-Encapsulate Transistors FEATURE § ® PNP silicon epitaxial planar transistor for switching and Amplifier applications ® As complementary type, the NPN transistor 2N3904 is Recommended ® This transistor is also available in the SOT-23 case with the type designation MMBT3906 文件：1.41716 Mbytes 页数：5 Pages | DGNJDZ 南晶电子 | DGNJDZ | |
丝印：2N3906；Package：TO-923L；PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 文件：421.71 Kbytes 页数：13 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
丝印：2N3906；Package：TO-92；General Purpose Transistor Features - PNP silicon epitaxial planar transistor for switching and amplifier applications. 文件：470.75 Kbytes 页数：4 Pages | COMCHIP 典琦 | COMCHIP |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
通用型 （Uni）
- 封装形式：
直插封装
- 极限工作电压：
40V
- 最大电流允许值：
0.2A
- 最大工作频率：
>200MHZ
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
0.625W
- 放大倍数：
β>100
- 图片代号：
A-31
- vtest：
40
- htest：
200000100
- atest：
0.2
- wtest：
0.625
详细参数
- 型号：
2N3906
- 功能描述：
两极晶体管 - BJT PNP Gen Pur SS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
PNP 集电极—基极电压
- VCBO：
集电极—发射极最大电压
- VCEO：
- 40 V 发射极 - 基极电压
- VEBO：
- 6 V
- 增益带宽产品fT：
直流集电极/Base Gain hfe
- Min：
100 A
- 安装风格：
SMD/SMT
- 封装/箱体：
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
蓝箭 |
TO92 |
1000000 |
2012 |
询价 | |||
CJ |
15+ |
TO-92 |
100000 |
低价热卖!现货供应,专业为客户提供一站式服务。 |
询价 | ||
TOSHIBA |
ROHS全新原装 |
SOT-92 |
97000 |
东芝半导体QQ350053121正纳全系列代理经销 |
询价 | ||
长电 |
24+ |
SOT-23 |
864000 |
一级代理/全新现货/长期供应!! |
询价 | ||
FSC/长电 |
14+无铅 |
TO-92 |
25700 |
优势产品,博盛微热卖!!! |
询价 | ||
FSC |
25+ |
250 |
全新原装!优势库存热卖中! |
询价 | |||
CJ/长电 |
2023+ |
SOT-23 |
15000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
CJ/长电 |
2021+ |
TO-92 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
Slkor/萨科微 |
24+ |
TO-92 |
50000 |
Slkor/萨科微一级代理,价格优势 |
询价 | ||
STMicroelectronics |
25+ |
N/A |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 |
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