PNP General Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

文件：654.29 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

丝印：2N3906；Package：TO-923L；PNP General-Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

文件：421.71 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

Package：TO-226-3，TO-92-3（TO-226AA）成形引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 0.2A TO92-3

ONSEMI

安森美半导体

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. ​​​​​​​ FEATURES ● Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ● Excellent DC Current Gain Linearity. ● Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. ● Low Collector

文件：186.48 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N3906 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................. -55 ~ +150 °C Junction Temperature...........................

文件：37 Kbytes 页数：4 Pages

HSMC

华昕

PNP Epitaxial Silicon Transistor

文件：195.08 Kbytes 页数：3 Pages

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