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2N4233A

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications

文件:264.21 Kbytes 页数:2 Pages

ISC

无锡固电

2N4233A

MEDIUM-POWER SILICON TRANSISTOR

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件:264.89 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N4233A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件:95.36 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N4233A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =

文件:95.36 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N4233A

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0.

文件:196.45 Kbytes 页数:4 Pages

boca

博卡

2N4233A

Power Transistors

Power Transistors TO-66 Case

文件:51.32 Kbytes 页数:1 Pages

Central

2N4233A

COMPLEMENTARY SILICON POWER TRANSISTORS

文件:344.67 Kbytes 页数:2 Pages

Central

2N4233A

Bipolar NPN Device in a Hermetically sealed TO66

文件:15.16 Kbytes 页数:1 Pages

SEME-LAB

Seme LAB

2N4233A

Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) TO-66 Sleeve

NJS

2N4233A

三极管

Mospec

统懋

产品属性

  • 产品编号:

    2N4233A

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 描述:

    PNP TRANSISTOR

供应商型号品牌批号封装库存备注价格
24+
TO-66
10000
全新
询价
SAMTEK
37
全新原装 货期两周
询价
MOTO
TO3
1235
优势库存
询价
Microsemi
1942+
N/A
908
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询价
MICROSEMI
25+
SMD
96
就找我吧!--邀您体验愉快问购元件!
询价
Microchip
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
N/A
24+/25+
37
原装正品现货库存价优
询价
MOT
24+
CAN3
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
MOTOROLA
24+
CAN3
3600
原装现货假一罚十
询价
N/A
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
更多2N4233A供应商 更新时间2025-10-5 10:20:00