NVMJST2D6N08HTXG

Marking：2D68H；Package：TCPAK10；MOSFET – Power, Single N-Channel 80 V, 2.8 m, 131.5 A

Features •SmallFootprint(5x7mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TCPAK57TopCoolPackage(TCPAK10) •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS2D1N04CLTWG

Marking：2D1N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 2.5 m, 132 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS2D2N06CLTWG

Marking：2D2N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 60 V, 2.0 m, 185 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS2D4N04CTWG

Marking：2D4N04C；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 2.3 m, 138 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS2D9N04CLTWG

Marking：2D9N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 2.8 m, 110 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

OPA2323IDGKR

Marking：2DGK；Package：VSSOP；OPAx323 20MHz High Bandwidth, 114dB CMRR, Low Voltage (1.7V to 5.5V), RRIO Zero-Cross Operational Amplifier

1Features •Zerocrossamplifierfor1.7Vto5.5Vapplications •Highrail-to-railCMRR:114dBtypical •Highgain-bandwidthproduct:20MHz •Fastslew-rate:33V/μstypical •Fast0.01settling:200nstypicalfor2Vstep •Lowinputoffsetvoltage:±150μVtypical •Lownoisefloor:5.5nV/√

PSMN2R0-40YLD

Marking：2D0L40Y；Package：SOT669；N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1.Generaldescription 180A,logiclevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56package usingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesignedand qualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits •180A

PSMN2R2-40YSD

Marking：2D2S40Y；Package：SOT669；N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1.Generaldescription 180A,standardlevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56 packageusingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesigned andqualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits •180

PSMN2R5-40YLD

Marking：2D5L40Y；Package：SOT669；N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1.Generaldescription 160A,logiclevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56package usingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesignedand qualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits •160A

PSMN2R8-40YSD

Marking：2D8S40Y；Package：SOT669；N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1.Generaldescription 160A,standardlevelgatedriveN-channelenhancementmodeMOSFETin175°CLFPAK56 packageusingadvancedTrenchMOSSuperjunctiontechnology.Thisproducthasbeendesigned andqualifiedforhighperformancepowerswitchingapplications. 2.Featuresandbenefits •160