丝印：2D08-1；Package：SOIC；Low Power Current Mode Push-Pull PWM

1FEATURES • Qualified for Automotive Applications • ESD Protection Exceeds 1500 V Per MIL-STD- 883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Dual Output Drive Stages in Push-Pull Configuration • Current Sense Discharge Transistor to Improve Dynamic Response • 1

文件：500.25 Kbytes 页数：17 Pages

TI

德州仪器

丝印：2D08-1；Package：SOIC；Low Power Current Mode Push-Pull PWM

1FEATURES • Qualified for Automotive Applications • ESD Protection Exceeds 1500 V Per MIL-STD- 883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Dual Output Drive Stages in Push-Pull Configuration • Current Sense Discharge Transistor to Improve Dynamic Response • 1

文件：500.25 Kbytes 页数：17 Pages

TI

德州仪器

丝印：2D08-1；Package：SOIC；Low Power Current Mode Push-Pull PWM

1FEATURES • Qualified for Automotive Applications • ESD Protection Exceeds 1500 V Per MIL-STD- 883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Dual Output Drive Stages in Push-Pull Configuration • Current Sense Discharge Transistor to Improve Dynamic Response • 1

文件：500.25 Kbytes 页数：17 Pages

TI

德州仪器