丝印：2D4；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For

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DIODES

美台半导体

丝印：2D4；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For

文件：566.43 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：2D4N04C；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 2.3 m, 138 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：279.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：2D4N04C；Package：LFPAK4；Power MOSFET 40 V, 2.3 m, 138 A, Single N?묬hannel

文件：203.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：2D430L；Package：LFPAK33；N-channel 30 V, 2.4 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

文件：724.74 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2D430L；Package：LFPAK56；N-channel 30 V, 2.4 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：724.24 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司