DMN62D4LDW-13

Marking：2D4；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) For

DMN62D4LDW-7

Marking：2D4；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) For

NVMYS2D4N04CTWG

Marking：2D4N04C；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 2.3 m, 138 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NTMYS2D4N04CTWG

Marking：2D4N04C；Package：LFPAK4；Power MOSFET 40 V, 2.3 m, 138 A, Single N?묬hannel

PSMN2R4-30MLD

Marking：2D430L；Package：LFPAK33；N-channel 30 V, 2.4 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

PSMN2R4-30YLD

Marking：2D430L；Package：LFPAK56；N-channel 30 V, 2.4 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology