丝印：2DG；Package：X2SON；DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

1 Features • Industry-leading ultra-low power consumption – 5Hz version: 0.54μA – 20Hz versions: 1.3μA – 80Hz version: 5.2μA • Operating VCC range: 1.65V to 5.5V • Operating temperature range: –40°C to +85°C • Magnetic threshold options (maximum BOP): – DG Version: 3.4mT – DU Version: 3.9

文件：1.89008 Mbytes 页数：39 Pages

TI

德州仪器

丝印：2DGI；Package：VFQFPN；VERSACLOCK® LOW POWER CLOCK GENERATOR

Features • Four internal PLLs • Internal non-volatile EEPROM • Internal I2C EEPROM master interface • FAST (400kHz) mode I2C serial interfaces • Input Frequencies – TCXO: 10 MHz to 40 MHz – Crystal: 8 MHz to 30 MHz • Output Frequency Ranges: kHz to 120 MHz • Each PLL has an 8-bit referenc

文件：428.42 Kbytes 页数：27 Pages

RENESAS

瑞萨

丝印：2DGI；Package：VFQFPN；VERSACLOCK® LOW POWER CLOCK GENERATOR

Features • Four internal PLLs • Internal non-volatile EEPROM • Internal I2C EEPROM master interface • FAST (400kHz) mode I2C serial interfaces • Input Frequencies – TCXO: 10 MHz to 40 MHz – Crystal: 8 MHz to 30 MHz • Output Frequency Ranges: kHz to 120 MHz • Each PLL has an 8-bit referenc

文件：428.42 Kbytes 页数：27 Pages

RENESAS

瑞萨

丝印：2DGK；Package：VSSOP；OPAx323 20MHz High Bandwidth, 114dB CMRR, Low Voltage (1.7V to 5.5V), RRIO Zero-Cross Operational Amplifier

1 Features • Zero cross amplifier for 1.7V to 5.5V applications • High rail-to-rail CMRR: 114dB typical • High gain-bandwidth product: 20MHz • Fast slew-rate: 33V/μs typical • Fast 0.01 settling: 200ns typical for 2V step • Low input offset voltage: ±150μV typical • Low noise floor: 5.5nV/√

文件：4.179979 Mbytes 页数：63 Pages

TI

德州仪器

RECTIFIER STACK (HIGH-SPEED CENTER TAP )

RECTIFIER STACK (HIGH-SPEED CENTER TAP)

文件：118.45 Kbytes 页数：1 Pages

TOSHIBA

东芝

RECTIFIER STACK (HIGH-SPEED CENTER TAP )

RECTIFIER STACK (HIGH-SPEED CENTER TAP)

文件：118.45 Kbytes 页数：1 Pages

TOSHIBA

东芝

High voltage rectifier diodes 2DGL5A /40KV series adopt high reliable mesa structure and diffusion craftwork, epoxy resin molded in a compact structure

文件：205.32 Kbytes 页数：1 Pages

ANSHAN

术立电子