BC856BSH

Marking：2E；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C

BC856BSH-Q

Marking：2E；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Closelymatchedcurrentgain •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto175°C •QualifiedaccordingtoA

BZX58550-C6V8

Marking：2E；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

BZX58550-C6V8-Q

Marking：2E；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8

BZX884S-B3V6

Marking：2E；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-B3V6-Q

Marking：2E；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

KST93

Marking：2E；Package：SOT-23；High Voltage Transistor

HighVoltageTransistor

MM3Z13

Marking：2E；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.200mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

NJM8020F3

Marking：2E；Package：SC-88A；LOW POWER SINGLE CHANNEL OP-AMPS

■FEATURES(V+=5V,V-=0V,Ta=25°C) ●GuaranteedTemperature-40℃to125℃ ●InputOffsetVoltage2mVmax. ●InputOffsetVoltageDrift17μV/℃max. ●SupplyCurrent0.7mAmax. ●OperatingVoltage3Vto36Vor±1.5Vto±18V ●IntegratedEMIfilterEMIRR=84dBtyp.@f=1.8GHz ●GBW1.1MHztyp. ●GNDsens

PBSS5130PAP

Marking：2E；Package：DFN2020-6；30 V, 1 A PNP/PNP low VCEsat (BISS) transistor

1.Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4130PANP.NPN/NPNcomplement:PBSS4130PAN. 2.Featuresandbenefits •Verylowcollec