丝印：2D1N08；Package：DFN5；Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：239.08 Kbytes 页数：8 Pages

ONSEMI

安森美半导体