丝印：2D1N08；Package：DFN5；Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：239.08 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications  Synchronous Rectificat

文件：258.92 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

ON
SO-8 FL

ON

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ON
SO-8FL

ON

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ON
DFN-5

ON

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