DMN62D4LDW-13

Marking：2D4；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) For

DMN62D4LDW-7

Marking：2D4；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) For

DRV5032DGDMRR

Marking：2DG；Package：X2SON；DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

1Features •Industry-leadingultra-lowpowerconsumption –5Hzversion:0.54μA –20Hzversions:1.3μA –80Hzversion:5.2μA •OperatingVCCrange:1.65Vto5.5V •Operatingtemperaturerange:–40°Cto+85°C •Magneticthresholdoptions(maximumBOP): –DGVersion:3.4mT –DUVersion:3.9

DRV5032DUDBZR

Marking：2DU；Package：SOT-23；DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

1Features •Industry-leadingultra-lowpowerconsumption –5Hzversion:0.54μA –20Hzversions:1.3μA –80Hzversion:5.2μA •OperatingVCCrange:1.65Vto5.5V •Operatingtemperaturerange:–40°Cto+85°C •Magneticthresholdoptions(maximumBOP): –DGVersion:3.4mT –DUVersion:3.9

DRV5032DUDMRR

Marking：2DU；Package：X2SON；DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

1Features •Industry-leadingultra-lowpowerconsumption –5Hzversion:0.54μA –20Hzversions:1.3μA –80Hzversion:5.2μA •OperatingVCCrange:1.65Vto5.5V •Operatingtemperaturerange:–40°Cto+85°C •Magneticthresholdoptions(maximumBOP): –DGVersion:3.4mT –DUVersion:3.9

NVMFS2D3P04M8LT1G

Marking：2D3P04；Package：DFN5；MOSFET - Power, Single P-Channel -40 V, 2.2 m, -222 A

Features •LowRDS(on)toMinimizeConductionLosses •HighCurrentCapability •AvalancheEnergySpecified •NVMFWS2D3P04M8L−WettableFlanksProduct •NVMPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapab

NVMFWS2D3N04XMT1G

Marking：2D3N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 2.35 m, 121 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AECQ101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications •MotorDrive •B

NVMFWS2D3P04M8LT1G

Marking：2D3P4W；Package：DFNW5；MOSFET - Power, Single P-Channel -40 V, 2.2 m, -222 A

Features •LowRDS(on)toMinimizeConductionLosses •HighCurrentCapability •AvalancheEnergySpecified •NVMFWS2D3P04M8L−WettableFlanksProduct •NVMPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapab

NVMFWS2D9N04XMT1G

Marking：2D9N4W；Package：DFNW5；MOSFET – Power, Single N-Channel, STD Gate, SO8FL 40 V, 3.1 m, 94 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications •MotorDrive •Ba

NVMJS2D5N06CLTWG

Marking：2D5N06CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 60 V, 2.4 m, 164 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK8Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant