丝印：2D；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applications Load Switch Power Managemen

文件：583 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：2D；Package：U-DFN2020-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applications Load Switch Power Managemen

文件：583 Kbytes 页数：11 Pages

DIODES

美台半导体

丝印：2D；Package：SOT-23；High Voltage Transistor

High Voltage Transistor

文件：46.04 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

丝印：2D；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 200mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：537.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：2D；Package：SOT-23；PNP High Voltage Amplifier

PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76.

文件：655.99 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

丝印：2D；Package：SOT-23；This device is designed for high voltage driver applications.

PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76.

文件：887.05 Kbytes 页数：14 Pages

FAIRCHILD

仙童半导体

丝印：2D；Package：SOT-23；PNP High Voltage Amplifier

FEATURES ● Epitaxial planar die construction. Pb ● Complementary NPN type available (MMBTA42). ● Ideal for medium power amplification and switching.

文件：188.31 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：2D；Package：SC-88A；LOW POWER SINGLE CHANNEL OP-AMPS

■ FEATURES(V+=5V, V-=0V, Ta=25°C) ●Guaranteed Temperature -40℃ to 125℃ ●Input Offset Voltage 2mV max. ●Input Offset Voltage Drift 17μV/℃max. ●Supply Current 0.7mA max. ●Operating Voltage 3V to 36V or ±1.5V to ±18V ●Integrated EMI filter EMIRR=84dB typ. @f=1.8GHz ●GBW 1.1 MHz typ. ●GND sens

文件：828.71 Kbytes 页数：19 Pages

NJRC

日本无线

丝印：2D；Package：DFN2020-6；30 V, 1 A NPN/NPN low VCEsat (BISS) transistor

1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP. 2. Features and benefits • Very low collec

文件：752 Kbytes 页数：17 Pages

NEXPERIA

安世

丝印：2D；Package：SOT23；PNP high-voltage transistor

1. General description PNP high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA42 2. Features and benefits • Low current (max. 100 mA) • High voltage (max. 300 V) 3. Applications • Telephony • Professional communication equipment

文件：793.55 Kbytes 页数：7 Pages

NEXPERIA

安世