| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari | Intersil Intersil Corporation | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa | Intersil Intersil Corporation | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | Intersil Intersil Corporation | Intersil | ||
NPTSeriesN-ChannelIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.4V@IC=20A ·1200VSwitchingSOACapability ·ShortCircuitRating ·LowConductionLoss APPLICATIONS ·ACandDCMotorControls ·PowerSupplies ·DriversforSolenoids,RelaysandContactors | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
H&MNPTIGBTsofferlowerlossesandhigherenergy | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
ReverseConductingIGBTwithmonolithicbodydiode Features: •PowerfulmonolithicBodyDiodewithverylowforwardvoltage •Bodydiodeclampsnegativevoltages •TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior •NPTtechnologyoffers | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
09+ |
TO-3P |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD |
2023+ |
TO-3P |
8700 |
原装现货 |
询价 | ||
MAXIMUM |
23+ |
TO-247 |
50000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
MAXIMUM |
2023+ |
TO-247 |
50000 |
一级代理优势现货,全新正品直营店 |
询价 | ||
INFINEON/英飞凌 |
2022+ |
TO-247 |
61258 |
原厂代理 终端免费提供样品 |
询价 | ||
INFINEON |
23+ |
TO-247 |
7000 |
询价 | |||
CHN |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
CHN |
24+ |
NA/ |
9750 |
原装现货,当天可交货,原型号开票 |
询价 |
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