UltraFast NPT IGBT

文件：699.48 Kbytes 页数：13 Pages

IRF

Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A

文件：222.91 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Full Bridge IGBT MTP (Ultrafast NPT IGBT), 40 A

文件：317.32 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Multi-purpose Medical Filter for Power Line Noise Protection

文件：160.35 Kbytes 页数：2 Pages

TEC

泰科电子

Multi-purpose Medical Filter for Power Line Noise Protection

文件：160.35 Kbytes 页数：2 Pages

MACOM

Multi-purpose Medical Filter for Power Line Noise Protection with Limited Leakage Current

文件：399.08 Kbytes 页数：2 Pages

MACOM

丝印：20M1H012；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 123 A at Tc = 25°C • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal

文件：1.86416 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：20M1H024；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 89 A at Tc = 25°C • RDS(on) = 24 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal p

文件：1.85569 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：20M1H050；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 48 A at Tc = 25°C • RDS(on) = 50 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal p

文件：1.82775 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：20M1H075；Package：PG-TO247-4-PLUS-NT14；CoolSiC™ 2000 V SiC Trench MOSFET

Features • VDSS = 2000 V at Tvj = 25°C • IDCC = 34 A at Tc = 25°C • RDS(on) = 75 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal p

文件：1.86472 Mbytes 页数：16 Pages

INFINEON

英飞凌