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1N5817G

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● High Reliability ● High Current Capability

文件:116.38 Kbytes 页数:3 Pages

MICROSEMI

美高森美

1N5817-G

Schottky Barrier Rectifiers

Features - Epitaxial construction. - Low forward voltage drop. - Metal-Semiconductor junction with guard ring. - High current capability. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.

文件:77.12 Kbytes 页数:3 Pages

COMCHIP

典琦

1N5817H

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,f

文件:51.96 Kbytes 页数:2 Pages

PANJIT

強茂

1N5817L

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

文件:61.1 Kbytes 页数:2 Pages

FORMOSA

美丽微半导体

1N5817L

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

文件:152.37 Kbytes 页数:2 Pages

BYTES

1N5817-LFR

1A SCHOTTKY BARRIER RECTIFIERS

FEATURES ● UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND ● EXTREMELY LOW VF ● LOW POWER LOSS/HIGH EFFICIENCY ● LOW STORED CHARGE, MAJORITY CARRIER CONDUCTION ● LEAD FREE

文件:120.94 Kbytes 页数:2 Pages

FRONTIER

1N5817M

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features ● High Current Capability ● Low Forward Voltage Drop ● Guard Ring for Transient Protection ● Glass Package for High Reliability ● Packaged for Surface Mount Applications

文件:59.09 Kbytes 页数:2 Pages

DIODES

美台半导体

1N5817RL

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

文件:75.98 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

1N5817RL

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件:249.43 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

1N5817RL

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. FEATURES AND BENEF

文件:61.24 Kbytes 页数:5 Pages

STMICROELECTRONICS

意法半导体

产品属性

  • 产品编号:

    1N5817

  • 制造商:

    Taiwan Semiconductor Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    1A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    55pF @ 4V,1MHz

  • 安装类型:

    通孔

  • 封装/外壳:

    DO-204AL,DO-41,轴向

  • 供应商器件封装:

    DO-204AL(DO-41)

  • 工作温度 - 结:

    -55°C ~ 125°C

  • 描述:

    DIODE SCHOTTKY 20V 1A DO204AL

供应商型号品牌批号封装库存备注价格
MIC
2012
DO-41
710
全新原装 正品现货
询价
TOS
24+
DO-214
1800
原装现货假一罚十
询价
星海
23+
DO-41
32078
10年以上分销商,原装进口件,服务型企业
询价
群鑫
22+
DO-41/A-405
30673
原装正品 一级代理
询价
SIPUSEMI
2021+
LL34
9000
原装现货,随时欢迎询价
询价
CJ/长电
25+
SOD-323
157272
明嘉莱只做原装正品现货
询价
24+
603
8540
只做原装正品现货或订货假一赔十!
询价
扬杰
25+
DO-41
10000
扬杰原厂一级代理商,价格优势!
询价
PANJIT/强茂
25+
DO-41
15620
PANJIT/强茂全新特价1N5817即刻询购立享优惠#长期有货
询价
1N5817
19+P/QX
5970
只做原装,现货库存
询价
更多1N5817供应商 更新时间2026-1-27 15:07:00