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1N5817L

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5817L

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

1N5817M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications

DIODESDiodes Incorporated

美台半导体

1N5817M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODESDiodes Incorporated

美台半导体

1N5817PT

VOLTAGERANGE20-40VoltsCURRENT1.0Ampere

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

1N5817RL

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

1N5817RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

1N5817RL

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency

ONSEMION Semiconductor

安森美半导体安森美半导体公司

1N5817RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

1N5817RLG

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
FORMOSA
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ON/安森美
23+
SOT123
15000
全新原装现货,价格优势
询价
ON/安森美
23+
SOD-123
50000
全新原装正品现货,支持订货
询价
ON/安森美
24+
NA/
4148
原装现货,当天可交货,原型号开票
询价
GENERALSEMI
24+/25+
733
原装正品现货库存价优
询价
VISHAY/GeneralSemiconduc
24+
DO-213ABLL41
6200
新进库存/原装
询价
GS
24+
1A圆形
10000
原装现货假一罚十
询价
LL41
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
25+23+
1WR
30042
绝对原装正品全新进口深圳现货
询价
1150
公司优势库存 热卖中!!
询价
更多1N5817L供应商 更新时间2025-7-22 17:24:00