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1N5817RLG

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

文件:75.98 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

1N5817RLG

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件:249.43 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

1N5817S

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

文件:52.22 Kbytes 页数:2 Pages

BILIN

银河微电

1N5817S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere FEATURES ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Guardring for overvoltage protection ◆ Low power loss,high efficiency ◆ High curren

文件:989.93 Kbytes 页数:2 Pages

SY

顺烨电子

1N5817S

Schottky Barrier Rectifiers

VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

文件:1.04528 Mbytes 页数:2 Pages

LUGUANG

鲁光电子

1N5817S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere FEATURES ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Guardring for overvoltage protection ◆ Low power loss,high efficiency ◆ High curren

文件:989.57 Kbytes 页数:2 Pages

SHUNYE

顺烨电子

1N5817S

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40Volts Forward Current -1.0 Ampere FEATURES ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Guardring for overvoltage protection ◆ Low power loss,high efficiency ◆ High current

文件:624.62 Kbytes 页数:2 Pages

CHENDA

辰达半导体

1N5817S

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

文件:242.91 Kbytes 页数:2 Pages

DSK

1N5817SF

SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere

Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current

文件:332.7 Kbytes 页数:2 Pages

CHENDA

辰达半导体

1N5817SF

SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere

Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current

文件:332.7 Kbytes 页数:2 Pages

GXELECTRONICS

星合电子

产品属性

  • 产品编号:

    1N5817

  • 制造商:

    Taiwan Semiconductor Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    1A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    55pF @ 4V,1MHz

  • 安装类型:

    通孔

  • 封装/外壳:

    DO-204AL,DO-41,轴向

  • 供应商器件封装:

    DO-204AL(DO-41)

  • 工作温度 - 结:

    -55°C ~ 125°C

  • 描述:

    DIODE SCHOTTKY 20V 1A DO204AL

供应商型号品牌批号封装库存备注价格
MIC
2012
DO-41
710
全新原装 正品现货
询价
TOS
24+
DO-214
1800
原装现货假一罚十
询价
星海
23+
DO-41
32078
10年以上分销商,原装进口件,服务型企业
询价
群鑫
22+
DO-41/A-405
30673
原装正品 一级代理
询价
SIPUSEMI
2021+
LL34
9000
原装现货,随时欢迎询价
询价
CJ/长电
25+
SOD-323
157272
明嘉莱只做原装正品现货
询价
24+
603
8540
只做原装正品现货或订货假一赔十!
询价
扬杰
25+
DO-41
10000
扬杰原厂一级代理商,价格优势!
询价
PANJIT/强茂
25+
DO-41
15620
PANJIT/强茂全新特价1N5817即刻询购立享优惠#长期有货
询价
1N5817
19+P/QX
5970
只做原装,现货库存
询价
更多1N5817供应商 更新时间2026-1-27 15:07:00