1N5817RLG分立半导体产品的二极管-整流器-单规格书PDF中文资料

1N5817RLG属于分立半导体产品的二极管-整流器-单。由安森美半导体制造生产的1N5817RLG二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。

This series employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

chrome barrier metal, epitaxial construction with oxide passivation

and metal overlap contact. Ideally suited for use as rectifiers in

low−voltage, high−frequency inverters, free wheeling diodes, and

polarity protection diodes.

特性 Features

• Extremely Low VF

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• These are Pb−Free Devices*

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead Temperature for Soldering Purposes:

260°C Max for 10 Seconds

• Polarity: Cathode Indicated by Polarity Band

• ESD Ratings: Machine Model = C (>400 V)

Human Body Model = 3B (>8000 V)